ToF-qSIMS Workstation

Innovative Time of Flight Quadrupole SIMS System

9 ₫

Model: ToF-qSIMS
Manufacturer: Hiden Analytical

The Hiden TOF-qSIMS system is designed for surface analysis and depth profiling applications of a wide range of materials including polymers, pharmaceuticals, superconductors, semiconductors, alloys, optical and functional coatings and dielectrics, with measurement of trace components to sub-ppm levels.

Application

Contamination with silicone: top monolayer specific analysis
Surgical stent: imaging, depth profiling and surface specific analysis to characterise the near surface
Contamination: imaging and mass spectra to locate and identify surface contamination
Nuclear materials: identification of isotopically rich materials using bulk composition mass spectra
Pharmaceuticals: identification of molecular signals using static SIMS on powders

Category: Uncategorized

The new Hiden TOF, time of flight analyser enhances SIMS to give the user the best of the dynamic range from high performance quadrupole SIMS together with the advantages of parallel data collection and molecular fragment analysis from time of flight SIMS, TOF-SIMS.

The TOF-qSIMS capability enables hyperspectral imaging for spatially resolved detailed materials analysis.

The TOF-qSIMS system offers the comprehensive capabilities of static TOF-SIMS, and high dynamic range depth profiling from the quadrupole SIMS.

Fully integrated and optimised for high performance SIMS analysis, the TOF-qSIMS Workstation system includes a multi-port UHV chamber, TOF-SIMS analyser, Hiden’s MAXIM quadrupole SIMS analyser, IG20 gas primary ion gun, a Cs metal Ion gun and a sample holder designed to accommodate the broadest sample range. High sensitivity SNMS mode is included for quantitative analysis of metallurgical thin films, conductive and non-conductive oxides and other alloy materials and coatings. Facilities for SIMS enhancement including oxygen flood, electron charge neutralization and vacuum bakeout are included as standard.

The SIMS Mapper PC software option provides for mapping with 2D and 3D view capability over the sample area. Electronic gating is included for optimised high dynamic range depth profiling. The TOF SIMS analysis capability includes full spectral analysis, pixel by pixel across the sample image.

Features

The SIMS PC data system, MASsoft Professional, includes a simple user-configurable interface for control and data acquisition, including set up and control of the primary ion beam rastering for surface analysis and depth profile applications.

The Vacuum Chamber Module:
Multiport stainless steel UHV analysis chamber including large view port, flanges and fittings. All ports are conflat type, UHV. The ultimate chamber vacuum is < 2 x 10-9 mbar after bake out.
TOF-SIMS ion analyser. Time of flight mass spectrometer
for enhanced static TOF-SIMS capability with hyperspectral imaging. Including ion extraction column matched to reflectron TOF with counting electronics High efficiency, on-axis, collection optics
Mass Range:		6 -10,000 amu standard.
Mass resolution		1500
Sensitivity		>100 kcps / nA (Al target, 100 pA 3 keV Ar)
SIMS Quadrupole ion analyser.
Mass Range:		510 amu standard. 300 amu and 1000 amu mass ranges optional.
Resolution:		5% valley between adjacent peaks of equal height throughout the mass range.
Detector:		Ion Counting detector, positive and negative ion detection, 4 kV post acceleration for positive ions.
Detection Range		1 : 107
Maximum count rate:		107 counts per second.
Minimum count rate:		1 count per second.
Sensitivity:		> 1 x 106 c/s per nanoamp (5 keV Ar, primary ion detecting Al+ from Al target at 20 mm working distance, 300 amu system).
Energy Filter		Energy Filter 300 off axis injection.
Ion Source		Integral SNMS ion source Electron impact 4 – 150 eV Suitable for residual gas analysis – RGA.
Mass Filter:		3 stages each of 4 poles.
Pole diameter:		9.0 mm – 1000 Series high performance system.
Bake out Temperature:		250°C.
IG20 Ion Gun specification
Ion Beam:	Energy		0.5 to 5.0 keV
	Spot diameter		50 microns for imaging 100 microns for depth profiling
	Current		0.1 to 600 nA
	Species		Oxygen or inert gases
	Deflection Field		+/- 4 mm
Ion Source:	Electron Impact		Twin Filament
	Electron Emission		0 to 20 mA
	Electron Energy		0 to 100 volts
Ion Column:	Condenser		3 element lens
	Objective		3 element lens
	Alignment		Independent X and Y alignment plates
	Scan Deflection		Independent X and Y deflection plates
	Fast Neutral Dump		3 degree bend in the ion column
	Beam blanking		Single deflector plate
Deflection Amplifiers:	Minimum Sweep Time:		64 µs
	Flyback Time:		15 µs
Beam Blanking:	Rise Time:		3 µs
	Fall Time:		3 µs
Mounting Port DN-35-CF (2.75″ OD) Conflat type
	Column Tip to Mounting Flange Distance:		282.5 mm
	Column Tip to Sample Working Distance:		20 to 50 mm
Mechanical Adjustment:	Mechanical Spot Alignment :		+/- 3 mm
IG5C Ion Gun Specification
Ion Beam
	Species Energy		Caesium 0.5 to 5.0 keV
	Spot diameter		20 microns minimum 80 µm typical
	Deflection Field		+/- 4 mm
	Current		0.1 to 150 nA
	Etch rate		Maximum 30 nm/min for a silicon target
Ion Source			Thermal decomposition surface Ionisation. Typically 10-20 W
Type
Ion Column			3 element lens Independent X and Y alignment plates for upper and lower column
Objective (Focus 2)			Independent X and Y deflection plates
Alignment			Double bend before objective lens
Deflection / Scan			Single deflector plate after condenser
Beam blanking
Mounting			DN-35-CF (2.75″ OD) Conflat type
Port			35 mm minimum internal diameter
Port Clearance
Column Tip to Mounting
Flange Distance			200 mm
Column Tip to Sample
Working Distance			10 to 50 mm (10 – 20 mm for small spot applications)
Differential Pumping			80 l/s turbomolecular pump set included
Bakeout
Maximum Recommended			200°C
Temperature
Deflection Amplifiers
	Minimum		64 µs
	Sweep Time
	Flyback Time		15 µs
Beam Blanking
	Rise Time		3 µs
	Fall Time		3 µs
Displays	PC based control		Ion Energy, Condenser Lens, Objective Lens, Heater Current,Upper X-Align, Upper Y-Align, Lower X-Align, Lower Y-Align X-Deflection, Y-Deflection, X-Scan Amplitude, Y Scan Amplitude.
	Diagnostics /measurement		Built in diagnostic line scan (X and Y), including supplies for electron suppressed beam current measurement and spotshape, and (incorporated electrometer displays beam current profile on PC). A simple line flyback raster generator is also included.
	Controls		Control of all beam steering plates, scan amplitudes, offsets and lenses with settings saved to PC for future recall.
	External inputs		The control unit accepts an external scan input. A gain control is provided to optimise amplification of the scan signal. External target bias input (max 350 V) that is switched via the beam diagnostics control.
Power Requirements			240/220 V, 120/110 V, 50/60 Hz, 0.25 kVA
Dimensions
	Control Unit		311 mm (12.25″) height, 343 mm (13.5″) deep, 19″ Rack Mounting.
	Beam steering		Mounts directly to the ion gun
	module		63 mm (2.5″) x 127 mm (5.0″) x 368 mm (14.5″) length

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Features

Hiden ToF-qSIMS Innovative Combination of Quadrupole and Time of Flight

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